14 December 1992 High-rate deposition of diamond films by oxy-acetylene torch
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Abstract
An oxy-acetylene flame can produce diamond films at significantly higher deposition rates than those associated with either microwave plasma or hot filament assisted chemical vapor deposition. We have established the growth conditions necessary to achieve good quality diamond on silicon substrates. The addition of hydrogen to the gas mixture has been shown to give good quality material at enhanced growth rates. The growth rate has been increased further by using a growth-etch cycling process. This is achieved by periodically pulsing extra oxygen into the gas stream to change from depositing to etching conditions. Under etching conditions the non-diamond carbon in the film is rapidly removed leaving the diamond behind. This allows the use of high rate growth conditions that would otherwise produce poor quality material. The morphology and Raman spectra of films produced by these techniques are presented. The scale-up of the deposition system to cover areas as large as 15 X 20 mm is reported. This is accomplished by rastering a burner consisting of a line of small flames.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin D. Hudson, Crofton J. Brierley, "High-rate deposition of diamond films by oxy-acetylene torch", Proc. SPIE 1760, Window and Dome Technologies and Materials III, (14 December 1992); doi: 10.1117/12.130794; https://doi.org/10.1117/12.130794
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