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5 January 1993 Evaluation of high-quantum-efficiency silicon photodiodes for calibration in the 400-nm to 900-nm spectral region
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Abstract
The reflectance and internal quantum efficiency (QE) of three single-element photodiodes are determined using two different light-trapping devices. The QED-200 light trapping device which is based on inversion layer photodiodes exhibits the best performance within the short wavelengths of the visible spectrum (VIS), while the A-O device based on p-n photodiodes, performs best in the long wave VIS up to 950 nm. The combination of the two light-traps provides nearly 100 percent external QE coverage from 400 to 950 nm. The reflectances and internal QE were determined within this spectral range for three photodiodes: UV100, an inversion layer photodiode; X-UV100, a shallow diffused n-p photodiode; and 10DPI/SB, a blue-enhanced p-n photodiode.
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Carlos R. Jorquera, Carol J. Bruegge, and Valerie G. Duval "Evaluation of high-quantum-efficiency silicon photodiodes for calibration in the 400-nm to 900-nm spectral region", Proc. SPIE 1762, Infrared Technology XVIII, (5 January 1993); https://doi.org/10.1117/12.138952
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