Translator Disclaimer
5 January 1993 Long-wavelength quantum-well infrared detectors based on intersubband transitions in InGaAs/InP quantum wells
Author Affiliations +
Abstract
In0.53Ga0.47As/InP infrared detectors with peak absorption at a wavelength of 8.5 micrometers have been fabricated and tested. It is shown that very high current responsivities and high gain are obtained. It is found that gain increases drastically when approaching detector voltages close to -8.5 V, which is explained by carrier impact excitation of electrons from the QW ground state to the excited extended state. The detectivity D* is about 1.2(DOT)1010 cm Hz1/2 W-1 at 80 K for a 45 degree(s) polished edge detector assuming unpolarized radiation. Grating coupling is studied by etching crossed gratings into the upper part of the mesas. The increase in responsivity as compared to a polished edge detector is by a factor of 2.5 to 3, irrespective to mesa sizes 500 X 500 or 150 X 150 micrometers 2. This gives a corresponding detectivity of (3 - 3.5)(DOT)1010 cm Hz1/2 W-1 at 80 K for unpolarized radiation.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Y. Andersson, Lennart Lundqvist, Z. F. Paska, Klaus P. Streubel, and Johan Wallin "Long-wavelength quantum-well infrared detectors based on intersubband transitions in InGaAs/InP quantum wells", Proc. SPIE 1762, Infrared Technology XVIII, (5 January 1993); https://doi.org/10.1117/12.138964
PROCEEDINGS
11 PAGES


SHARE
Advertisement
Advertisement
Back to Top