5 January 1993 New type of InAs-based IR-MIS avalanche photodetector
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Abstract
It has been shown in [1—2] that using MIS—avalanche structure as a sensitive head in modern optoelectronic devices could open new vistas in their applications in spectral measurements, medicine, chemistry etc. In this paper are presented results concerning creation of a new type of IR—(up to 3.3 pm) MIS Avalanche Photodetector based on InAs substrate. The coefficient of light pulses(l pm) internal avalanche multiplication for the best samples under LN conditions (77 K) was about M = 10 - 12.
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Alexander G. Solonko, Alexander G. Solonko, } "New type of InAs-based IR-MIS avalanche photodetector", Proc. SPIE 1762, Infrared Technology XVIII, (5 January 1993); doi: 10.1117/12.139001; https://doi.org/10.1117/12.139001
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