29 December 1992 Submicron optical ranging of nanometric particles in semiconductor materials
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Abstract
Semiconductor materials (bulk material as well as epilayers) contain grown-in defects such as nanometric microprecipitates. These particles play a dramatic role in the electrical specifications of the devices. A new method of investigating the vertical position of these defects in the IC or OEIC layered structures is proposed. It stems from the 3D observation of defocused Point Spread Functions arising from the illumination of these small scattering defects. The calculation of the Fourier transform is numerically performed and the z position of the point sources is deduced from the Fourier Phase Shift. This method is capable of sub- micron measurement. Numerical simulations as well as experimental illustrations are presented which confirm the potential of the method.
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Michel Castagne, Michel Castagne, Jean-Pierre Fillard, Jean-Pierre Fillard, Jean-Marc Lussert, Jean-Marc Lussert, H. M'timet, H. M'timet, } "Submicron optical ranging of nanometric particles in semiconductor materials", Proc. SPIE 1767, Inverse Problems in Scattering and Imaging, (29 December 1992); doi: 10.1117/12.139024; https://doi.org/10.1117/12.139024
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