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2 February 1993 Three-dimensional optical memory based on transparent electron-trapping thin films
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Transparent electron trapping (ET) thin films are optical storage media recently developed by Quantex. A 3-D erasable optical memory based on stacked ET thin film layers is presented in this paper. The page memory is written by properly imaging the page composer onto a specific layer with blue laser light at 488 nm. To read out the memory on a specific layer, a slice of 1064 nm infrared (IR) beam is guided into the ET layer from the side of the stacked layer media. The orange emission (around 630 nm) corresponding to the written page memory at that layer is emitted as the result of the JR stimulation. The feasibility of this novel 3-D optical memory has been demonstrated by preliminary experiments.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiangyang Yang, Charles Y. Wrigley, and Joseph Lindmayer "Three-dimensional optical memory based on transparent electron-trapping thin films", Proc. SPIE 1773, Photonics for Computers, Neural Networks, and Memories, (2 February 1993);

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