Threshold characteristics of an OASLM using a a-Si:H photoconductor and a SSFLC modulator

Naoki Kato; Rieko Sekura; Teruo Ebihara; Tadao Iwaki; Shuhei Yamamoto

doi:10.1117/12.983214

2 February 1993 Threshold characteristics of an OASLM using a a-Si:H photoconductor and a SSFLC modulator

Naoki Kato, Rieko Sekura, Teruo Ebihara, Tadao Iwaki, Shuhei Yamamoto

Proceedings Volume 1773, Photonics for Computers, Neural Networks, and Memories; (1993) https://doi.org/10.1117/12.983214
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

We present the write light intensity threshold characteristics of an OASLM incorporating a hydrogenated amorphous silicon photoconductor and a surface stabilized ferroelectric liquid crystal modulator, LAPS-SLM. In this paper, we describe a new implementation which applying the two threshold characteristics of the LAPS-SLM to perform all Boolean logic by one device.

Citation Download Citation

Naoki Kato, Rieko Sekura, Teruo Ebihara, Tadao Iwaki, and Shuhei Yamamoto "Threshold characteristics of an OASLM using a a-Si:H photoconductor and a SSFLC modulator", Proc. SPIE 1773, Photonics for Computers, Neural Networks, and Memories, (2 February 1993); https://doi.org/10.1117/12.983214

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