15 April 1993 High-brightness laser pulse at 338.4 nm utilizing the SBS and SRS processes
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In this experimental work, the SBS and SRS processes were used in order to produce UV laser beams of good optical quality and short duration time. An XeCl oscillator and a double-pass amplifier with a phase-conjugate mirror via stimulated Brillouin scattering, generate the laser beam at 308 nm to pump a Raman cell. The oscillator pulse was 11 nsec long, while the amplified phase-conjugate beam duration could vary from 3.3 to 1.5 nsec, by using the compression effect operated by the Brillouin mirror. When this last laser beam was focused into a Raman cell containing methane at 30 atm, the shortest backward stimulated Raman scattering pulse at 338.4 nm was 170 psec long with a brightness in excess of 1013 W(DOT)cm-2(DOT)sr-1. The 338.4 nm wavelength is interesting for the production of short bunches of cold electrons from Mg and Zn targets.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Nassisi, V. Nassisi, } "High-brightness laser pulse at 338.4 nm utilizing the SBS and SRS processes", Proc. SPIE 1780, Lens and Optical Systems Design, 17801F (15 April 1993); doi: 10.1117/12.142847; https://doi.org/10.1117/12.142847

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