15 April 1993 High-brightness laser pulse at 338.4 nm utilizing the SBS and SRS processes
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Abstract
In this experimental work, the SBS and SRS processes were used in order to produce UV laser beams of good optical quality and short duration time. An XeCl oscillator and a double-pass amplifier with a phase-conjugate mirror via stimulated Brillouin scattering, generate the laser beam at 308 nm to pump a Raman cell. The oscillator pulse was 11 nsec long, while the amplified phase-conjugate beam duration could vary from 3.3 to 1.5 nsec, by using the compression effect operated by the Brillouin mirror. When this last laser beam was focused into a Raman cell containing methane at 30 atm, the shortest backward stimulated Raman scattering pulse at 338.4 nm was 170 psec long with a brightness in excess of 1013 W(DOT)cm-2(DOT)sr-1. The 338.4 nm wavelength is interesting for the production of short bunches of cold electrons from Mg and Zn targets.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Nassisi, V. Nassisi, } "High-brightness laser pulse at 338.4 nm utilizing the SBS and SRS processes", Proc. SPIE 1780, Lens and Optical Systems Design, 17801F (15 April 1993); doi: 10.1117/12.142847; https://doi.org/10.1117/12.142847
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