4 March 1993 Antireflection coating on GaAs for the range 8-12 μm
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The antireflection coating design on GaAs for the spectral range from 8 micrometers to 12 micrometers is discussed. Based on the comprehensive search technique the best systems of up to 5 layers of ZnS and Ge are presented. To get better antireflection effect the materials with lower refractive indices are needed. Utilization of yttria for this purpose is suggested and optical constants in IR for both evaporated and sputtered layers are established. Though evaporated yttria layers exhibit relatively high absorption in the region of our interest, sputtered films are much better and several systems of up to four layers of Y2O3, ZnS, and Ge are computed by the comprehensive search technique again.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiri Hrdina, Jiri Hrdina, Lubomir Jastrabik, Lubomir Jastrabik, Jiri Potmesil, Jiri Potmesil, Petr Siroky, Petr Siroky, Dagmar Chvostova, Dagmar Chvostova, Jaroslav Sobota, Jaroslav Sobota, } "Antireflection coating on GaAs for the range 8-12 μm", Proc. SPIE 1782, Thin Films for Optical Systems, (4 March 1993); doi: 10.1117/12.141011; https://doi.org/10.1117/12.141011

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