4 March 1993 Laterally and depth resolved photothermal absorption measurements on ZrO2 and MgF2 single-layer films
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Abstract
Photothermal displacement microscpy was used for the characterization of Zr02 and MgF2 single-layer thin films with respect to inhomogeneities of the absorption at X = 514nm. Images are presented for X/2, X, and 27 films on BK7 glass and SQl quartz substrates. Applying modulation frequencies ranging from 1kHz to 100kHz a lateral resolution of sveral microns could be obtained. We found that size and density of the absorption inhomogeneities as well as absorptivity strongly depend on the fabrication process and weakly on substrate material, no dependence on thin film thickness was found. It is shown that the apparent defect density varies with the modulation frequency demonstrating the capability of the photothermal method to discriminate between absorptions in various depth of the thin film system. Defect densities derived from the phtothermal measurements are related to results from total integrated light scattering (TIS) experiments performed on various samples at X = 632nm. TIS amplitudes for MgF2 films on glass substrates were about one order of magnitude smaller than those from films on quartz. The latter revealed strong large scale (1mm ) variations of the light scattering amplitude what is in accordance with the absorption measurements
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Michael Reichling, Eberhard Welsch, Angela Duparre, Eckart Matthias, "Laterally and depth resolved photothermal absorption measurements on ZrO2 and MgF2 single-layer films", Proc. SPIE 1782, Thin Films for Optical Systems, (4 March 1993); doi: 10.1117/12.141041; https://doi.org/10.1117/12.141041
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