4 March 1993 Thermal and laser-induced phase transformation in rf-sputtered GeSb2Te4 thin films
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Proceedings Volume 1782, Thin Films for Optical Systems; (1993); doi: 10.1117/12.141027
Event: Optical Systems Design '92, 1992, Berlin, Germany
Abstract
Reported here are studies about the thermal and laser induced metastable phase formation in amorphous GeSb2Te4 thin films prepared by rf-magnetron sputtering. The general structural properties of this most promising optical phase change recording material are discussed from the point of view of fast structural phase transformation.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Songsheng Xue, Zhengxiu Fan, Fuxi Gan, "Thermal and laser-induced phase transformation in rf-sputtered GeSb2Te4 thin films", Proc. SPIE 1782, Thin Films for Optical Systems, (4 March 1993); doi: 10.1117/12.141027; https://doi.org/10.1117/12.141027
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KEYWORDS
Crystals

Thin films

Laser crystals

Pulsed laser operation

Transmission electron microscopy

Annealing

Ferroelectric materials

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