Thermal and laser-induced phase transformation in rf-sputtered GeSb2Te4 thin films

Songsheng Xue; Zhengxiu Fan; Fuxi Gan

doi:10.1117/12.141027

4 March 1993 Thermal and laser-induced phase transformation in rf-sputtered GeSb₂Te₄ thin films

Songsheng Xue, Zhengxiu Fan, Fuxi Gan

Proceedings Volume 1782, Thin Films for Optical Systems; (1993) https://doi.org/10.1117/12.141027
Event: Optical Systems Design '92, 1992, Berlin, Germany

Abstract

Reported here are studies about the thermal and laser induced metastable phase formation in amorphous GeSb₂Te₄ thin films prepared by rf-magnetron sputtering. The general structural properties of this most promising optical phase change recording material are discussed from the point of view of fast structural phase transformation.

Citation Download Citation

Songsheng Xue, Zhengxiu Fan, and Fuxi Gan "Thermal and laser-induced phase transformation in rf-sputtered GeSb₂Te₄ thin films", Proc. SPIE 1782, Thin Films for Optical Systems, (4 March 1993); https://doi.org/10.1117/12.141027

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