1 August 1992 600°C thermal oxidation of amorphous LPCVD silicon for thin film transistor application
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Abstract
Silicon layers deposited by low pressure chemical vapor deposition at a temperature between 520 degree(s)C and 620 degree(s)C have been oxidized at 600 degree(s)C to evaluate the feasibility of a pad oxide for a multilayered insulator used as the gate of a thin film transistor. It is concluded that such a pad oxide can be used if the silicon is deposited in the amorphous phase.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Sarrabayrouse, P. Taurines, E. Scheid, D. Bielle-Daspet, B. de Mauduit, J. P. Guillemet, A. Martinez, "600°C thermal oxidation of amorphous LPCVD silicon for thin film transistor application", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131058; https://doi.org/10.1117/12.131058
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