1 August 1992 Advanced MESFET burn-in method and equipment
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Abstract
An advanced method was developed for MESFET burn-in purposes, based on preserving the samples in different stages of the degradation process, due to thermal and electrical stress, for subsequent structural investigations. This is performed by the automatic termination of the electrical stress separately on any device before its complete destruction. The equipment realizing this method is also described.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Balazs Kovacs, Balazs Kovacs, Imre Mojzes, Imre Mojzes, Ferenc Csanyi, Ferenc Csanyi, } "Advanced MESFET burn-in method and equipment", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131060; https://doi.org/10.1117/12.131060
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