Composition and properties of PECVD silicon and boron nitrides films

Zinoviy L. Akkerman; Nadezhda I. Fainer; Marina L. Kosinova; A. N. Korshunov; Yu. M. Rumjantsev; E. G. Salman; Natal'ya P. Sysoeva

doi:10.1117/12.131000

1 August 1992 Composition and properties of PECVD silicon and boron nitrides films

Zinoviy L. Akkerman, Nadezhda I. Fainer, Marina L. Kosinova, A. N. Korshunov, Yu. M. Rumjantsev, E. G. Salman, Natal'ya P. Sysoeva

Author Affiliations +

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131000
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

The processing dependent properties of PECVD SiN_xC_yH_z and BN_xH_y thin insulating films deposited using hexamethyldisilazane (HMDS) or HMDS + NH₃ mixture and borazine without and with helium dilution, respectively, were considered. The deposition temperature of the films was varied in the range of 50 - 500 degree(s)C. The results of investigations of the chemical composition, kinetics of growth, optical and electrical properties of the films are presented. The correlations between these properties and the chemical composition and growth conditions are established. It has been found that ammonia added to HMDS considerably improves the insulating properties of SiN_xC_yH_z films. We can conclude that the ionic-type instability in the MIS-structure with BN_xH_y was caused by hydrogen, incorporated into the films during growth. The conditions of stable dielectric film preparation have been determined. The films can be used as insulators for microelectronic devices on compound semiconductors.

Citation Download Citation

Zinoviy L. Akkerman, Nadezhda I. Fainer, Marina L. Kosinova, A. N. Korshunov, Yu. M. Rumjantsev, E. G. Salman, and Natal'ya P. Sysoeva "Composition and properties of PECVD silicon and boron nitrides films", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131000

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