1 August 1992 Control and characterization of semiconductor superlattices by grazing: incidence x-ray diffraction method
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Abstract
The report is dedicated to the application of grazing-incidence x-ray diffraction in the inclined Bragg-Laue geometry for investigation of semiconductor superlattices (SL). It is shown that it provides depth-resolved information on the SL structure and can be used for express control of SL parameters. A new x-ray spectrometer for surface structure characterization of semiconductor materials is presented.
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Rafik M. Imamov, Rafik M. Imamov, O. G. Melikyan, O. G. Melikyan, Dmitry V. Novikov, Dmitry V. Novikov, } "Control and characterization of semiconductor superlattices by grazing: incidence x-ray diffraction method", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131045; https://doi.org/10.1117/12.131045
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