Etching of silicon in CBrF3: formation of deep trenches and plasma diagnostics

Yuri P. Baryshev; K. Sh. Isaev; I. E. Nikiphorov; Alexander A. Orlikovsky; A. V. Sapozhnikov

doi:10.1117/12.131041

1 August 1992 Etching of silicon in CBrF₃: formation of deep trenches and plasma diagnostics

Yuri P. Baryshev, K. Sh. Isaev, I. E. Nikiphorov, Alexander A. Orlikovsky, A. V. Sapozhnikov

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131041
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

Etching of silicon has been examined in CBrF₃ plasma in a wide pressure range (2 - 100 Pa). Optical emission of CBrF₃ plasma was investigated in the visible range. Mass spectrometry was used for the studying of ion plasma composition and for the determination of the main etching products. Conditions for the high quality trenches were determined.

Citation Download Citation

Yuri P. Baryshev, K. Sh. Isaev, I. E. Nikiphorov, Alexander A. Orlikovsky, and A. V. Sapozhnikov "Etching of silicon in CBrF₃: formation of deep trenches and plasma diagnostics", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131041

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