Fast and simple checking methods of the doping concentration in semiconductors

Zsolt J. Horvath

doi:10.1117/12.131061

1 August 1992 Fast and simple checking methods of the doping concentration in semiconductors

Zsolt J. Horvath

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131061
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

Four different possibilities are proposed for the fast checking of doping and impurity concentration in semiconductors. The proposition is based on the characteristic experimental concentration dependence of the breakdown voltage, the slope of the reverse I-V characteristics, the ac conductivity, and the capacitance at zero bias, obtained in planar and mesa Au/Cr/n-GaAs Schottky contacts.

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Zsolt J. Horvath "Fast and simple checking methods of the doping concentration in semiconductors", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131061

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