1 August 1992 Gettering annealing effect on deep-level defect concentration in epitaxial GaAs obtained by chloride method
Author Affiliations +
Abstract
Gettering directly included into a technological process of GaAs epitaxial building-up is described. The process of gettering consisted of the formation of TaAs layer of 5-7 micrometers thickness and its annealing in H2 followed by the etching of the layer. It was found that introduction of gettering annealing into the process of the epitaxial structure build-up leads to a decrease in the concentration of the electrically active deep-level centers.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. V. Kouchinski, P. V. Kouchinski, V. M. Lomako, V. M. Lomako, L. N. Shakhlevich, L. N. Shakhlevich, M. S. Rusak, M. S. Rusak, G. N. Troyanova, G. N. Troyanova, K. D. Yashin, K. D. Yashin, } "Gettering annealing effect on deep-level defect concentration in epitaxial GaAs obtained by chloride method", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131036; https://doi.org/10.1117/12.131036
PROCEEDINGS
6 PAGES


SHARE
Back to Top