1 August 1992 Information-writing mechanisms in thin-film metal-ferroelectric-insulator-semiconductor structures
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Abstract
The example of ferroelectric films of barium strontium niobate (BSN) deposited on a silicon substrate with thin silicon nitride sublayer was used to show that the specific features of charge accumulation process in metal-ferroelectric-insulator-semiconductor (MFIS) structures depending on the parameters of insulator and ferroelectric layers manifest themselves in three mechanisms: (1) injection writing, (2) polarization writing, and (3) polarization -- injection mechanism at which the polarization in ferroelectric enhanced the injection of carriers from the semiconductor-insulator interface. The details of manifestation of each mechanism were analyzed.
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I. L. Baginsky, E. G. Kostov, "Information-writing mechanisms in thin-film metal-ferroelectric-insulator-semiconductor structures", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131027; https://doi.org/10.1117/12.131027
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