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1 August 1992 Information-writing mechanisms in thin-film metal-ferroelectric-insulator-semiconductor structures
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The example of ferroelectric films of barium strontium niobate (BSN) deposited on a silicon substrate with thin silicon nitride sublayer was used to show that the specific features of charge accumulation process in metal-ferroelectric-insulator-semiconductor (MFIS) structures depending on the parameters of insulator and ferroelectric layers manifest themselves in three mechanisms: (1) injection writing, (2) polarization writing, and (3) polarization -- injection mechanism at which the polarization in ferroelectric enhanced the injection of carriers from the semiconductor-insulator interface. The details of manifestation of each mechanism were analyzed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. L. Baginsky and E. G. Kostov "Information-writing mechanisms in thin-film metal-ferroelectric-insulator-semiconductor structures", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992);

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