1 August 1992 Laser annealing of silicon islands
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Laser recrystalization on silicon dioxide polysilicon islands by pulsed laser radiation has been carried out. As a result of laser treatment single-crystalline layers have been produced which were investigated by means of translucent electron microscopy. It has been shown that the solution obtained for temperature distribution can be expressed via elliptical Jacoby sine. The n-channel metal-dielectric-semiconductor transistors with electric parameters close to the device made on crystal substrate are prepared on the island regions by the method of planar technology.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ol'ga Safronova, Ol'ga Safronova, Alexander Komarnitskii, Alexander Komarnitskii, Vladimir Kukin, Vladimir Kukin, Boris Sedunov, Boris Sedunov, Valerii V. Uzdovskii, Valerii V. Uzdovskii, Vladimir I. Khainovskii, Vladimir I. Khainovskii, } "Laser annealing of silicon islands", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.130989; https://doi.org/10.1117/12.130989

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