1 August 1992 Monte Carlo simulation of submicron Si p-MOSFETs
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Simulation of submicrometer silicon p-channel MOSFETs using the Monte Carlo (MC) method is presented in this paper. A two-dimensional device simulator has been developed to investigate hot-carrier, nonstationary transport. The space-charge effects are included through the self-consistent 2-D Poisson solution. Ionized impurity, inter- and intravalley scattering with acoustic and nonpolar-optical phonons as well as impact ionization (II) have been taken into account in our model. The classical partial diffusive model is employed for surface scattering process. It was found that the average drift velocity indicates an overshoot at the pinched-off region of the device. The comparison with results of drift-diffusion (DD) simulation has shown the negligible difference in I-V curves obtained by the MC and DD calculations for devices with channel length greater than 0.2 micrometers .
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maxim Ershov, J. Ershova, Victor Ryzhii, "Monte Carlo simulation of submicron Si p-MOSFETs", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.141063; https://doi.org/10.1117/12.141063

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