1 August 1992 Parameter determination of the polysilicon emitter interface for bipolar transistor
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The electrical parameters of polysilicon-contacted emitters are investigated. The emitter-base junction C-2-V plots demonstrated an anomaly because of charge occurrence at the polySi-monoSi interface. A critical analysis of well-known methods for emitter series resistance determination is carried out and the new method, which coupled the dc and ac measurement's dignities, is described. The procedure of emitter low-frequency noise determination is proposed and the experimental results received by this manner are presented.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. M. Tkachenko, M. M. Tkachenko, G. P. Kolomoets, G. P. Kolomoets, V. N. Nazarenko, V. N. Nazarenko, } "Parameter determination of the polysilicon emitter interface for bipolar transistor", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131023; https://doi.org/10.1117/12.131023

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