1 August 1992 Parameter determination of the polysilicon emitter interface for bipolar transistor
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Abstract
The electrical parameters of polysilicon-contacted emitters are investigated. The emitter-base junction C-2-V plots demonstrated an anomaly because of charge occurrence at the polySi-monoSi interface. A critical analysis of well-known methods for emitter series resistance determination is carried out and the new method, which coupled the dc and ac measurement's dignities, is described. The procedure of emitter low-frequency noise determination is proposed and the experimental results received by this manner are presented.
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M. M. Tkachenko, M. M. Tkachenko, G. P. Kolomoets, G. P. Kolomoets, V. N. Nazarenko, V. N. Nazarenko, } "Parameter determination of the polysilicon emitter interface for bipolar transistor", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131023; https://doi.org/10.1117/12.131023
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