Polycrystalline resistors with current-induced tuning of the electrical parameters

M. M. Tkachenko; G. P. Kolomoets; Nickolay G. Melentyev

doi:10.1117/12.131024

1 August 1992 Polycrystalline resistors with current-induced tuning of the electrical parameters

M. M. Tkachenko, G. P. Kolomoets, Nickolay G. Melentyev

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131024
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

Results of experimental investigation of the current-induced resistance change in polycrystalline silicon films (PSFs) with doping concentrations of 2 (DOT) 10¹⁷ cm^-3 -2 (DOT) 10²⁰ cm^-3 are presented. For the concentration of 1 (DOT) 10¹⁹ cm^-3 and 2 (DOT) 10¹⁹ cm^-3 the effect of current-induced resistance increase is found and preliminary discussion is made. The application to monolithic delay line (MDL) is described and the main electrical parameters and characteristics of designed ICs are compared with known MDLs' series.

Citation Download Citation

M. M. Tkachenko, G. P. Kolomoets, and Nickolay G. Melentyev "Polycrystalline resistors with current-induced tuning of the electrical parameters", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131024

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