1 August 1992 Properties of heterostructures for pseudomorphic HEMTs
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Abstract
The transport properties of the pseudomorphic system Al0.23Ga0.77As-In0.11Ga0.89As have been studied by magneto-transport combined with high pressures technique up to 8 kbar at 4 K. Shubnikov-de Haas measurements reveal a marked decrease in carrier concentration with increasing pressure, which is attributed to carriers being trapped at centers responsible for parallel conduction. From Van der Pauw measurements at various temperatures and pressures, the presence of a DX-like center is proposed. At high pressures, the reduced scattering and Fermi energy allows the resolution of some spin-split levels giving an indication that the g-factor is enhanced in this system as compared to the bulk InGaAs, although a precise value is not extracted.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Skrabka, Cliva M. Sotomayor-Torres, "Properties of heterostructures for pseudomorphic HEMTs", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131059; https://doi.org/10.1117/12.131059
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