1 August 1992 Pulsed laser-excited microwave photoconductivity applications to high-resolution defect diagnostics of ion- and laser-beam-modified semiconductor surface
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Abstract
A novel diagnostic technique for the study of semiconductor surfaces based on laser induced microwave photoconductivity detection with high spatial and temporal resolution is described. Experimental data on nonlocal modification effects in laser produced scribing, doping, and annealing of ion implanted GaAs and Si are presented. Mechanisms of nonlocal structural and electric properties changers under modification are analyzed. Nonlocality phenomena are concluded to be universal for any strong modification procedure and very important for microelectronics technology.
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Alexander A. Manenkov, Alexander A. Manenkov, Sergei Yurievich Sokolov, Sergei Yurievich Sokolov, D. L. Khavroshin, D. L. Khavroshin, } "Pulsed laser-excited microwave photoconductivity applications to high-resolution defect diagnostics of ion- and laser-beam-modified semiconductor surface", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131049; https://doi.org/10.1117/12.131049
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