1 August 1992 Radiation hardness of silicon dioxide dielectric strength in silicon MOS structures
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The paper deals with the radiation hardness of the Si-SiO2 system -- the basis of advanced MOS VLSI integrated circuits. While the radiation-induced behavior of such crucial Si-SiO2 parameters as surface and oxide charges have been intensively investigated for many years, the radiation aspects of the dielectric strength of thin oxide films has not been investigated. This work describes experiments carried out in order to determine radiation hardness of silicon dioxide dielectric strength. The results show that the (gamma) -radiation does not change the oxide reliability parameters up to the dose of 10 Mrad. On the other hand, transient processes which pass before breakdown occurs are strongly affected in irradiated oxides. Radiation-induced changes can also be responsible for the annihilation and generation of high-field defects which affect the parameter distributions in the near-intrinsic range.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomasz Brozek, Tomasz Brozek, } "Radiation hardness of silicon dioxide dielectric strength in silicon MOS structures", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131038; https://doi.org/10.1117/12.131038

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