1 August 1992 Radiation-induced modification of the dry vacuum photoresist layers during ion implantation
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Abstract
Peculiarities of 30...100 keV P+ and Ar+ ion implantation into dry vacuum resist on the base of -pyrone have been studied by x-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. Phosphorus atom distribution profile has been shown to have an anomalous shape with two peaks, one of which is situated in a region of projected range, while the other is on the sample surface directly. Radiation-induced diffusion and solid phase reactions leading to phosphorus organic coating formation of about 40..50 Ao in thickness has been revealed to occur during phosphorus ion implantation.
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E. V. Kotov, Yurii Ivanovich Gudimenko, Vladimir Enokovich Agabekov, "Radiation-induced modification of the dry vacuum photoresist layers during ion implantation", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131048; https://doi.org/10.1117/12.131048
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