1 August 1992 Reactive ion etching of deep trenches in silicon
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Abstract
We have developed a new production technology of deep trenches RIE with a photoresist mask. RIE was performed in a low-pressure batch diode reactor. Wafers were placed on RF (5,28 MHz) electrode covered by organic lacquer. The maximum loading was 24 wafers having a diameter of 100 mm. Positive photoresist with 2 micron thickness was used for masking without any thermal treatment after development. The line width was 1.5 - 2.0 micron. Because earlier investigated mixtures of chlorine and bromine-containing halocarbons with SF6 didn't allow sufficient selectivity silicon/photoresist, we have proposed to use for deep silicon etching the mixture of CF3I/SF6 and investigated the dependence of silicon and photoresist etch rates and etch anisotropy on basic controlled plasma parameters.
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Vladimir N. Bliznetsov, Vladimir N. Bliznetsov, Oleg P. Gutshin, Oleg P. Gutshin, V. Yachmenev, V. Yachmenev, } "Reactive ion etching of deep trenches in silicon", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.130992; https://doi.org/10.1117/12.130992
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