Reactive ion etching of deep trenches in silicon

Vladimir N. Bliznetsov; Oleg P. Gutshin; V. Yachmenev

doi:10.1117/12.130992

1 August 1992 Reactive ion etching of deep trenches in silicon

Vladimir N. Bliznetsov; Oleg P. Gutshin; V. Yachmenev

Author Affiliations +

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.130992
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

We have developed a new production technology of deep trenches RIE with a photoresist mask. RIE was performed in a low-pressure batch diode reactor. Wafers were placed on RF (5,28 MHz) electrode covered by organic lacquer. The maximum loading was 24 wafers having a diameter of 100 mm. Positive photoresist with 2 micron thickness was used for masking without any thermal treatment after development. The line width was 1.5 - 2.0 micron. Because earlier investigated mixtures of chlorine and bromine-containing halocarbons with SF₆ didn't allow sufficient selectivity silicon/photoresist, we have proposed to use for deep silicon etching the mixture of CF₃I/SF₆ and investigated the dependence of silicon and photoresist etch rates and etch anisotropy on basic controlled plasma parameters.

Citation Download Citation

Vladimir N. Bliznetsov, Vladimir N. Bliznetsov, Oleg P. Gutshin, Oleg P. Gutshin, V. Yachmenev, V. Yachmenev, } "Reactive ion etching of deep trenches in silicon", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.130992; https://doi.org/10.1117/12.130992

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