Reduction of residual doping in molecular-beam epitaxial GaAs

Gencho M. Minchev; L. Pramatarova; Ludmil M. Trendafilov; Balint Podor; K. Somogyi; L. Andor; Imre Mojzes

doi:10.1117/12.131054

1 August 1992 Reduction of residual doping in molecular-beam epitaxial GaAs

Gencho M. Minchev, L. Pramatarova, Ludmil M. Trendafilov, Balint Podor, K. Somogyi, L. Andor, Imre Mojzes

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131054
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

Unintentionally doped GaAs molecular beam epitaxial layers were grown using MBE equipment developed for research purposes. The process of surface treatment of the GaAs substrates is described. The MBE grown layers were characterized using temperature dependent Hall effect measurements, and low temperature photoluminescence spectroscopy. The occurrence of unintentional doping elements (C and Mn) are studied too. A novel method is proposed to reduce the amount of unintentional C resulting in an estimated concentration of C less than about a few times 10¹⁴ cm^-3.

Citation Download Citation

Gencho M. Minchev, L. Pramatarova, Ludmil M. Trendafilov, Balint Podor, K. Somogyi, L. Andor, and Imre Mojzes "Reduction of residual doping in molecular-beam epitaxial GaAs", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131054

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