Solid-phase doping of silicon by flash lamp and laser irradiation

A. V. Chankin; G. N. Mikhailova; A. S. Seferov; Yakh'ya V. Fattakhov; Il'dus B. Khaibullin; Anurada Dhaul; R. Chander

doi:10.1117/12.131062

1 August 1992 Solid-phase doping of silicon by flash lamp and laser irradiation

A. V. Chankin, G. N. Mikhailova, A. S. Seferov, Yakh'ya V. Fattakhov, Il'dus B. Khaibullin, Anurada Dhaul, R. Chander

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131062
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

A comparative investigation of flash lamp and laser doping of Si was carried out in order to study a possibility of pulsed solid-phase processing of large size wafers. Submicron boron- doped layers in Si were formed by either Xe flash lamp or CO₂ laser applications. Two types of surface dopant source were successfully used: pure boron and boron-containing emulsitone. SIMS, four-probe method, and Hall effect were used for sample characterization.

Citation Download Citation

A. V. Chankin, G. N. Mikhailova, A. S. Seferov, Yakh'ya V. Fattakhov, Il'dus B. Khaibullin, Anurada Dhaul, and R. Chander "Solid-phase doping of silicon by flash lamp and laser irradiation", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131062

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