Study of charge carriers mobility degradation in the MOS-transistor channel by means of Hall current

Anatoly P. Dostanko; Victor M. Ivkin; I. P. Salnikova

doi:10.1117/12.130994

1 August 1992 Study of charge carriers mobility degradation in the MOS-transistor channel by means of Hall current

Anatoly P. Dostanko, Victor M. Ivkin, I. P. Salnikova

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.130994
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

The influence of doping the gated oxide of submicron (channel length approximately 2 micrometers ) MOSFETs with phosphorus on their characteristic degradation has been investigated. It is shown that phosphorus ion implantation into polysilicon lying on the oxide in the range of 500 - 1.500 (mu) C/cm² followed by thermal treatment at 850 degree(s)C for diffusing the phosphorus into the oxide results in a negligible threshold voltage growth and transconductance reduction. Mobility degradation in a MOSFET channel of a split drain- contact transistor has been tested by means of an in-situ Hall current method. It is shown that doping oxide with phosphorus leads to a negligible reduction of charge carrier mobility. Device degradation in electric regimes, providing injection of hot carriers into the gated oxide, has been studied. It is shown that a time dependence character of the mobility degradation of charge carriers measured by the Hall-current method differs from that calculated form the device transconductance. It is supposed that it is due to shortening the effective channel length during the formation of localized charge areas in the gated oxide near the drain. It is shown that the device characteristic degradation with P-doped gated oxide in the substrate maximum current regime at high (3.5 5V) gate voltage decreases as compared with that of undoped devices.

Citation Download Citation

Anatoly P. Dostanko, Victor M. Ivkin, and I. P. Salnikova "Study of charge carriers mobility degradation in the MOS-transistor channel by means of Hall current", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.130994

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