Thermodynamic simulation of deposition of molybdenum and tungsten disilicides in MOCVD processes

F. A. Kuznetsov; V. A. Titov; A. N. Golubenko; A. A. Titov

doi:10.1117/12.131001

1 August 1992 Thermodynamic simulation of deposition of molybdenum and tungsten disilicides in MOCVD processes

F. A. Kuznetsov, V. A. Titov, A. N. Golubenko, A. A. Titov

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131001
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

Modeling of disilicide deposition in the system with volatile metal organic and fluorinated silicon organic compounds was performed for a number of systems: M-Si-C-H-Ar, M-Si-C-O- Cl-H-Ar, M-Si-C-H-F-Ar, and M-Si-C-O-F-H-Ar (M equals W,Mo). It was shown that in some of these systems (especially with fluorinated compounds) there are wider regions of quasi- equilibrium deposition of disilicides.

Citation Download Citation

F. A. Kuznetsov, V. A. Titov, A. N. Golubenko, and A. A. Titov "Thermodynamic simulation of deposition of molybdenum and tungsten disilicides in MOCVD processes", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131001

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