AlGaInP materials grown by elemental-source molecular beam epitaxy

John A. Varriano; M. W. Koch; Glenn E. Kohnke; F. G. Johnson; Gary W. Wicks

doi:10.1117/12.141111

16 February 1993 AlGaInP materials grown by elemental-source molecular beam epitaxy

John A. Varriano, M. W. Koch, Glenn E. Kohnke, F. G. Johnson, Gary W. Wicks

Proceedings Volume 1788, Sources and Detectors for Fiber Communications; (1993) https://doi.org/10.1117/12.141111
Event: Fibers '92, 1992, Boston, MA, United States

Abstract

We report on the growth of AlGaInP materials on GaAs substrates using solid, elemental phosphorus in a valved cracker source by molecular beam epitaxy (MBE). The two ternaries are found to be of comparable or better quality than material grown by other, more conventional techniques which use phosphine. The successful growth and doping of the quaternary is reported and recent work in the growth of GaInP quantum well (QW) lasers is discussed. Finally, the compatibility of the valved source in growing arsenide/phosphide heterojunctions is demonstrated.

Citation Download Citation

John A. Varriano, M. W. Koch, Glenn E. Kohnke, F. G. Johnson, and Gary W. Wicks "AlGaInP materials grown by elemental-source molecular beam epitaxy", Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); https://doi.org/10.1117/12.141111

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