16 February 1993 Development of GaInAsP/GaAs strained-layer quantum-well diode lasers
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Abstract
Diode lasers with InGaAs strained-layer quantum wells and GaInP cladding layers for operation at 980 nm have been investigated. Two types of device structure, differing in the optical-waveguide material have been grown by organometallic vapor phase epitaxy. Threshold current densities as low as 85 A/cm2 and differential efficiencies as high as 93% have been measured on broad-area devices. Mass transport of GaInP and GaInAsP alloys has been used to fabricate buried-heterostructure lasers with threshold currents as low as 3 mA and output powers of 30 mW/facet for uncoated devices. Threshold currents of 7 mA and single spatial mode output power in excess of 50 mW/facet have been obtained for uncoated, ridge-waveguide lasers.
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Steven H. Groves, Steven H. Groves, Zong-Long Liau, Zong-Long Liau, Susan C. Palmateer, Susan C. Palmateer, James N. Walpole, James N. Walpole, Leo J. Missaggia, Leo J. Missaggia, "Development of GaInAsP/GaAs strained-layer quantum-well diode lasers", Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141096; https://doi.org/10.1117/12.141096
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