16 February 1993 Dual pin photodetector with very low parasitic series interconnection
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A dual back-illuminated photodetector for balanced coherent receivers applications is presented. The photodetectors have an InP/InGaAs/InP p-i-n structure. Several additional semiconductor layers have been added to fabricate the structure by selective wet etching. The material was grown by metalorganic vapor phase epitaxy (MOVPE) on a semiinsulating, Fe doped, InP substrate. The passivation and the insulation between contacts were obtained using polyimide. The contact structure is intended to connect the photodetector to the package by flip-chip. The measured photodetector capacitance was around 0.2 pF for a single photodetector (without series connection), the series resistance under 20 ohms, and the dark current under 10 nA.
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Oscar Anton-Molina, J. F. Hernandez-Gil, Jose Luis de Miguel y Anton, Martin G. Young, Uziel Koren, Barry I. Miller, Javier Alonso, Enrique Garcia, "Dual pin photodetector with very low parasitic series interconnection", Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141104; https://doi.org/10.1117/12.141104

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