16 February 1993 Dual pin photodetector with very low parasitic series interconnection
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A dual back-illuminated photodetector for balanced coherent receivers applications is presented. The photodetectors have an InP/InGaAs/InP p-i-n structure. Several additional semiconductor layers have been added to fabricate the structure by selective wet etching. The material was grown by metalorganic vapor phase epitaxy (MOVPE) on a semiinsulating, Fe doped, InP substrate. The passivation and the insulation between contacts were obtained using polyimide. The contact structure is intended to connect the photodetector to the package by flip-chip. The measured photodetector capacitance was around 0.2 pF for a single photodetector (without series connection), the series resistance under 20 ohms, and the dark current under 10 nA.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oscar Anton-Molina, Oscar Anton-Molina, J. F. Hernandez-Gil, J. F. Hernandez-Gil, Jose Luis de Miguel y Anton, Jose Luis de Miguel y Anton, Martin G. Young, Martin G. Young, Uziel Koren, Uziel Koren, Barry I. Miller, Barry I. Miller, Javier Alonso, Javier Alonso, Enrique Garcia, Enrique Garcia, } "Dual pin photodetector with very low parasitic series interconnection", Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141104; https://doi.org/10.1117/12.141104


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