16 February 1993 InGaAs/AlGaAs strained quantum-well diode lasers
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The OMVPE growth and performance of graded-index separate-confinement heterostructure strained quantum-well InGaAs-AlGaAs diode lasers are reviewed. Broad-stripe lasers have exhibited Jth as low as 60 A cm-2 for a cavity length L equals 1500 micrometers and differential quantum efficiency (eta) d as high as 90% for L equals 300 micrometers . Similar heterostructures have been used to fabricate traveling wave amplifiers with a laterally tapered gain region that emit over 1 W cw in a nearly diffraction-limited spatial lobe at 0.98 micrometers , linear arrays of 200-micrometers -long uncoated ridge-waveguide lasers with average threshold currents of 4 mA and (eta) d approximately 90%, and high-power broad-stripe lasers with power conversion efficiency exceeding 50% at 75 degree(s)C.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christine A. Wang, Christine A. Wang, Hong K. Choi, Hong K. Choi, James N. Walpole, James N. Walpole, Emily S. Kintzer, Emily S. Kintzer, Stephen R. Chinn, Stephen R. Chinn, Dean Z. Tsang, Dean Z. Tsang, John D. Woodhouse, John D. Woodhouse, Joseph P. Donnelly, Joseph P. Donnelly, } "InGaAs/AlGaAs strained quantum-well diode lasers", Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141105; https://doi.org/10.1117/12.141105


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