16 February 1993 InGaAsP/InGaAs multi-quantum-well distributed-Bragg-reflector lasers grown by chemical beam epitaxy
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Abstract
We report the fabrication and performance of InGaAs/InGaAsP multi-quantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy. By using a long and weak grating, which was made on a thin and uniformly grown quaternary layer, we have been able to well control the grating coupling constant, (kappa) . For most of the lasers the measured linewidths are below 10 MHz. A record high side mode suppression ratio of 58.5 dB was obtained.
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Fow-Sen Choa, Fow-Sen Choa, Won-Tien Tsang, Won-Tien Tsang, Ralph A. Logan, Ralph A. Logan, } "InGaAsP/InGaAs multi-quantum-well distributed-Bragg-reflector lasers grown by chemical beam epitaxy", Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141101; https://doi.org/10.1117/12.141101
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