16 February 1993 Self-consistent calculation of temperature profiles in proton-implanted top-surface-emitting diode lasers
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Abstract
A new self-consistent thermal electrical model of proton-implanted top-surface-emitting lasers is applied to study thermal properties of GaAs/AlGaAs/AlAs devices with the active-region diameter of 35 micrometers . The results show that intense heating occurs at pumping currents exceeding 4 times threshold. Minimization of electrical series resistance is shown to be very important for improving the device performance. However, due to p-side up mounting, calculated thermal resistance remains relatively large even when electrical series resistance is very small.
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Wlodzimierz Nakwaski, Wlodzimierz Nakwaski, Marek Osinski, Marek Osinski, } "Self-consistent calculation of temperature profiles in proton-implanted top-surface-emitting diode lasers", Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141100; https://doi.org/10.1117/12.141100
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