16 February 1993 Temperature-engineered growth of low-threshold lasers on nonplanar substrates
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The temperature engineered growth (TEG) technique for the single step fabrication of buried heterostructure lasers is reviewed. GaAs/AlGaAs quantum well lasers and strained InGaAs/GaAs quantum well lasers have been fabricated with threshold current of 2 mA and 3 mA for the GaAs and InGaAs systems, respectively. We show that the use of strained quantum wells resulted in better collection of carriers and higher external quantum efficiency (88%). The growth of strained InGaAs/GaAs lasers integrated with Bragg reflectors utilizing the TEG technique is shown to be a promising technique for obtaining low threshold current surface emitting lasers incorporating a folded cavity.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Newton C. Frateschi, Paul Daniel Dapkus, "Temperature-engineered growth of low-threshold lasers on nonplanar substrates", Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141114; https://doi.org/10.1117/12.141114


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