Nonlinear GaAlInAs/AlInAs multiple-quantum-well materials and devices at 1.3 microns for ultrafast TDMA interconnects

Mark F. Krol; Steven T. Johns; Raymond K. Boncek; Tomoko Ohtsuki; Brian P. McGinnis; Chia Chen Hsu; Galina Khitrova; Hyatt M. Gibbs; Nasser Peyghambarian

doi:10.1117/12.141716

26 February 1993 Nonlinear GaAlInAs/AlInAs multiple-quantum-well materials and devices at 1.3 μm for ultrafast TDMA interconnects

Mark F. Krol, Steven T. Johns, Raymond K. Boncek, Tomoko Ohtsuki, Brian P. McGinnis, Chia Chen Hsu, Galina Khitrova, Hyatt M. Gibbs, Nasser Peyghambarian

Author Affiliations +

Proceedings Volume 1790, Analog Photonics; (1993) https://doi.org/10.1117/12.141716
Event: Fibers '92, 1992, Boston, MA, United States

Abstract

Multiple Quantum Well (MQW) materials and devices have been designed and demonstrated to have large optical nonlinearities which are suitable for use in ultrafast optical TDMA interconnects at 1.3 micrometers . The MQW materials consist of GaAlInAs wells and AlInAs barriers grown lattice-matched to a semi-insulating InP substrate by molecular beam epitaxy. The MQW samples exhibited large absorption changes at 1.3 micrometers due to bandfilling and exchange effects. The carrier saturation densities near the heavy-hole exciton peak were similar to those for GaAs/AlGaAs MQWs. The large optical nonlinearities near 1.3 micrometers were used to demonstrate an all-optical, high-contrast asymmetric reflection modulator suitable for performing all-optical time-division demultiplexing at low pump intensities. The modulator consists of an asymmetric Fabry-Perot etalon which utilizes a nonlinear MQW spacer. The modulator exhibited an on/off contrast ratio of greater than 1000:1 and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm². The recovery of the modulator is shown to decay with a time-constant of 725 ps.

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Mark F. Krol, Steven T. Johns, Raymond K. Boncek, Tomoko Ohtsuki, Brian P. McGinnis, Chia Chen Hsu, Galina Khitrova, Hyatt M. Gibbs, and Nasser Peyghambarian "Nonlinear GaAlInAs/AlInAs multiple-quantum-well materials and devices at 1.3 μm for ultrafast TDMA interconnects", Proc. SPIE 1790, Analog Photonics, (26 February 1993); https://doi.org/10.1117/12.141716

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