Tunable mode-locked laser source based on a semiconductor TWLA at 1.3 um

Reinhard K. Erdmann; Steven T. Johns; Jason P. Sokoloff

doi:10.1117/12.141718

26 February 1993 Tunable mode-locked laser source based on a semiconductor TWLA at 1.3 μm

Reinhard K. Erdmann, Steven T. Johns, Jason P. Sokoloff

Proceedings Volume 1790, Analog Photonics; (1993) https://doi.org/10.1117/12.141718
Event: Fibers '92, 1992, Boston, MA, United States

Abstract

A semi-conductor TWLA provides the gain medium for an external cavity laser source at 1.32 microns for compatibility with single mode fiber optic systems. The active layer of the waveguide is InGaAsP in an angle stripe geometry. Parameters for CW lasing are established. Pulsed operation is then achieved by two methods: direct RF modulation of the bias current, and regenerative feedback of the converted optical output signal. Both methods yield short pulses of different frequency noise characteristics. The mode-locked rate can be adjusted over a wide range for different applications by varying the cavity length. Wavelength tuning is achieved by replacing the cavity end mirror with a grating the use of an all fiber cavity is examined.

Citation Download Citation

Reinhard K. Erdmann, Steven T. Johns, and Jason P. Sokoloff "Tunable mode-locked laser source based on a semiconductor TWLA at 1.3 μm", Proc. SPIE 1790, Analog Photonics, (26 February 1993); https://doi.org/10.1117/12.141718

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