25 February 1993 Effects of 5.5-MeV proton irradiation on reliability of a strained-quantum-well laser diode and a multiple-quantum-well broadband light-emitting diode
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Abstract
Two classes of quantum-well-based fiber-optic light sources are examined for degradation under 5.5-MeV proton irradiation as part of an evaluation study for satellite applications. Contrary to previous experience with bulk active area heterostructure light-emitting diodes and laser diodes, it was found that these quantum-well light-emitting diodes are more tolerant of proton irradiation than quantum-well-based lasers. This is the case when the quantum-well light-emitting diode structure allows operation far into gain saturation and the cavity is lossy compared with the quantum-well lasers where gain is more sensitive to current density and with low-loss cavities. Experimental damage factors were measured for performance parameters of these quantum-well photonic devices and found to be similar to those previously reported for carrier removal rates in GaAs-based electronic structures.
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Bruce D. Evans, Bruce D. Evans, C. A. Gossett, C. A. Gossett, Harold E. Hager, Harold E. Hager, Chi-Shain Hong, Chi-Shain Hong, Barrie W. Hughlock, Barrie W. Hughlock, } "Effects of 5.5-MeV proton irradiation on reliability of a strained-quantum-well laser diode and a multiple-quantum-well broadband light-emitting diode", Proc. SPIE 1791, Optical Materials Reliability and Testing: Benign and Adverse Environments, (25 February 1993); doi: 10.1117/12.141166; https://doi.org/10.1117/12.141166
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