25 February 1993 Radiation response of 1300-nm optoelectronic components in a natural space environment
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We report energy-dependent proton and Co-60 test results and analysis assessing performance of In0.53Ga0.47As photodetectors and In0.71Ga0.29As0.61P0.39 laser diodes for satellite applications. Calculations of the nonionizing energy loss (NIEL) for protons in InGaAs allow damage assessment using a general technique for evaluating displacement damage in orbit. Device performance is predicted for several shield thicknesses and orbital conditions. We also discuss effects in optoelectronic devices due to total dose and ionization transients.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheryl J. Dale, Paul W. Marshall, "Radiation response of 1300-nm optoelectronic components in a natural space environment", Proc. SPIE 1791, Optical Materials Reliability and Testing: Benign and Adverse Environments, (25 February 1993); doi: 10.1117/12.141165; https://doi.org/10.1117/12.141165


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