25 February 1993 Radiation response of 1300-nm optoelectronic components in a natural space environment
Author Affiliations +
Abstract
We report energy-dependent proton and Co-60 test results and analysis assessing performance of In0.53Ga0.47As photodetectors and In0.71Ga0.29As0.61P0.39 laser diodes for satellite applications. Calculations of the nonionizing energy loss (NIEL) for protons in InGaAs allow damage assessment using a general technique for evaluating displacement damage in orbit. Device performance is predicted for several shield thicknesses and orbital conditions. We also discuss effects in optoelectronic devices due to total dose and ionization transients.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheryl J. Dale, Cheryl J. Dale, Paul W. Marshall, Paul W. Marshall, } "Radiation response of 1300-nm optoelectronic components in a natural space environment", Proc. SPIE 1791, Optical Materials Reliability and Testing: Benign and Adverse Environments, (25 February 1993); doi: 10.1117/12.141165; https://doi.org/10.1117/12.141165
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Low noise InGaAs balanced p i n photoreceiver for space...
Proceedings of SPIE (August 26 2008)
Characterisation of photon counting systems at NPL
Proceedings of SPIE (April 27 2010)
CCD Image Sensors For Earth Observation Satellites
Proceedings of SPIE (September 18 1987)
Silicon quadrant detector in CMOS technology
Proceedings of SPIE (October 21 2004)

Back to Top