1 January 1993 Infrared photocathodes for streak image tubes based on semiconductor heterostructures and superlattices
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Proceedings Volume 1801, 20th International Congress on High Speed Photography and Photonics; (1993); doi: 10.1117/12.145772
Event: 20th International Congress on High Speed Photography and Photonics, 1992, Victoria, BC, Canada
Abstract
Photocathodes based on In0.53Ga0.47As/InP heterostructures (HS-photocathodes) with Schottky barriers for a spectral range of 0.9 - 1.6 micrometers were investigated. The maximum external quantum yield was 0.5% at (lambda) equals 1.5 micrometers and dark current was Ied equals 3*10-8 A/cm2. It has been shown that in such photoemitters under reverse bias of about U equals 30 V, the electric field completely penetrates into the working layer of the photocathode. Since the dark current does not depend on the value of the reverse bias, HS-photocathodes may be used for time analyzing tubes to record picosecond pulses with milliwatt peak intensity. To increase the signal/noise ratio we suggest using InP/In0.53Ga0.47As superlattice (SL) for designing a SL-photocathode with internal amplification.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. S. Chernikov, Eduard L. Nolle, Alexander M. Prokhorov, Emil Vasilievich Russu, Mikhail Ya. Schelev, E. G. Sokol, "Infrared photocathodes for streak image tubes based on semiconductor heterostructures and superlattices", Proc. SPIE 1801, 20th International Congress on High Speed Photography and Photonics, (1 January 1993); doi: 10.1117/12.145772; https://doi.org/10.1117/12.145772
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KEYWORDS
Electrons

Silver

Indium gallium arsenide

Quantum efficiency

Superlattices

Heterojunctions

Cesium

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