14 January 1993 Characterization of PECVD process-induced degradation of EEPROM reliability
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Proceedings Volume 1802, Microelectronics Manufacturing and Reliability; (1993) https://doi.org/10.1117/12.139358
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
MOSFET instabilities as a result of plasma processing have received significant attention in recent years. The focus of previous research has been directed at basic MOSFET devices. This paper describes the effects of PECVD PSG passivation on EEPROM device reliability through the use of response surface methodology (RSM). The investigation produced evidence of hydrogen induced EEPROM device degradation. An activation energy of 0.41 eV has been calculated using array cycling data at temperatures between 85 degree(s)C and 125 degree(s)C. The use of FTIR analysis produced excellent correlation between accelerated electron/hold trapping and the Si-H content of the as-deposited film. This result demonstrates that FTIR measurements serve as an effective process monitor of hydrogen induced degradation. The effects of PECVD process parameters on film integrity have been evaluated through the utilization of a passivation integrity etch. The process window has been found to be bounded by poor write/erase characteristics at high Si-H levels and poor film integrity at very low Si-H levels in the as-deposited film.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark D. Griswold, Frank R. Myers, Karen Ramondetta, Alex Shaw, "Characterization of PECVD process-induced degradation of EEPROM reliability", Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); doi: 10.1117/12.139358; https://doi.org/10.1117/12.139358
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