14 January 1993 Impact of statistics on hot-carrier lifetime estimates of n-channel MOSFETs
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Proceedings Volume 1802, Microelectronics Manufacturing and Reliability; (1993) https://doi.org/10.1117/12.139350
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
A unique statistical approach to hot-carrier lifetime estimates is proposed. Unlike previous work, this approach emphasizes the inherent variability in IC processing. As a result, log- normal distributions of hot-carrier lifetimes in micron and submicron n-channel MOS transistors are presented for the first time. It is also shown that the variation in these distributions can be independent of stress voltage. Therefore, accelerated voltage tests can be used to quickly gather statistical data. Without this statistical information, conventional lifetime techniques significantly overestimate the hot-carrier lifetime.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric S. Snyder, Eric S. Snyder, Ashish Kapoor, Ashish Kapoor, Clint Anderson, Clint Anderson, } "Impact of statistics on hot-carrier lifetime estimates of n-channel MOSFETs", Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); doi: 10.1117/12.139350; https://doi.org/10.1117/12.139350
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