14 January 1993 Particle evaluation/control of the Ti/TiN barrier layer in BiCMOS processing
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Proceedings Volume 1802, Microelectronics Manufacturing and Reliability; (1993) https://doi.org/10.1117/12.139361
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
Snake/comb defect test structures and an in-line patterned wafer inspection system (Inspex) are very effective for monitoring, investigating, and controlling contamination in modern silicon wafer manufacturing. These techniques have been widely used in our wafer fabrication facility to monitor silicon wafer processing, and to diagnose device failures. In this paper, the methodology of using these techniques to evaluate and control Ti/TiN barrier layer particles is demonstrated. The correlation between these two techniques was studied. A defectivity control baseline for Ti/TiN deposition process was established using statistical analysis. New and improved preventative maintenance procedures were implemented based on the data from snake and Inspex monitors. As a result, the particle defectivity of the Ti/TiN sputtering process has been dramatically reduced in the Ti/TiN process. The column failures of BiCMOS fast SRAM devices have been reduced by approximately 30%, and the probe yield of the SRAM product line has increased by over 14%.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ping Wang, Bin Liu, Mike May, Mark Granum, "Particle evaluation/control of the Ti/TiN barrier layer in BiCMOS processing", Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); doi: 10.1117/12.139361; https://doi.org/10.1117/12.139361
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